1 power transistors 2sb1502 silicon pnp epitaxial planar type darlington for power amplification complementary to 2sd2275 n features l optimum for 55w hifi output l high foward current transfer ratio h fe : 5000 to 30000 l low collector to emitter saturation voltage v ce(sat) : < 2.5v n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C120 C100 C5 C8 C5 60 3.5 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ceo i ebo v ceo h fe1 h fe2 * v ce(sat) v be(sat) f t t on t stg t f conditions v cb = C120v, i e = 0 v ce = C100v, i b = 0 v eb = C5v, i c = 0 i c = C30ma, i b = 0 v ce = C5v, i c = C1a v ce = C5v, i c = C4a i c = C4a, i b = C4ma i c = C4a, i b = C4ma v ce = C10v, i c = C 0.5a, f = 1mhz i c = C4a, i b1 = C4ma, i b2 = 4ma, v cc = C50v min C100 2000 5000 typ 20 1.0 0.8 1.0 max C100 C100 C100 30000 C2.5 C3.0 unit m a m a m a v v v mhz m s m s m s t c =25 c ta=25 c unit: mm internal connection b c e * h fe2 rank classification rank q s p h fe2 5000 to 15000 7000 to 21000 8000 to 30000 1:base 2:collector 3:emitter topC3l package 20.0 0.5 6.0 10.0 26.0 0.5 20.0 0.5 1.5 2.5 solder dip 10.9 0.5 123 2.0 0.3 3.0 0.3 1.0 0.2 5.0 0.3 3.0 4.0 2.0 5.45 0.3 0.6 0.2 1.5 2.7 0.3 1.5 2.0 f 3.3 0.2 3.0
2 power transistors 2sb1502 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 80 60 20 50 70 40 10 30 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =3.5w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ? ? ? ? ? ? t c =25?c ?0.1ma ?0.2ma ?0.3ma ?0.4ma i b =?0.5ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.1 ?00 ?0 ? ?0.3 ? ?0 i c /i b =1000 25?c ?5?c t c =100?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.1 ?00 ?0 ? ?0.3 ? ?0 i c /i b =1000 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? 10 30 100 300 1000 3000 10000 30000 100000 v ce =5v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 8 ? ? ? 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =1000 (? b1 =i b2 ) v cc =?0v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 10ms t=1ms i cp i c non repetitive pulse t c =25?c dc collector to emitter voltage v ce ( v ) collector current i c ( a )
3 power transistors 2sb1502 r th(t) t 10 ? 10 2 10 ? 1 10 ? 10 10 3 10 4 0.1 1 10 100 1000 note: r th was measured at ta=25?c and under natural convection. (1) p t =10v 0.3a (3w) and without heat sink (2) p t =10v 1.0a (10w) and with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ?c/w )
please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconductor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the internet or in any other way, is prohibited. request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese govern- ment if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or gen- eral electronic equipment (such as office equipment, communications equipment, measuring in- struments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. 2001 mar
|
